Samsung Galaxy S6 to Utilize Next-Gen UFS two.0 Memory?

Samsung Galaxy S6 to Utilize Next-Gen UFS two.0 Memory?

The Samsung Galaxy S6, codenamed Project Zero, appearance mighty promising as additional rumoured specification of the approaching flagship is leaked. now around, a report from a Korean newspaper indicates that future Samsung smartphones, ranging from the Galaxy S6, would use a next-gen NAND storage which can supply a major boost in performance.

The rumoured NAND storage is named UFS two.0, that stands for Universal Flash Storage, and is capable of information transfer rates of up to one.2GB/s. to place this into perspective, eMMC 5.0 memory – that is that the current revision that's usually employed in today’s smartphones – maxes out at 400MB/s; that’s 3 times slower than UFS’ theoretical most transfer rate.

On prime of that, UFS conjointly prices regarding identical to manufacture as eMMC. Power draw from UFS is additionally lower; the maximum amount as 0.5 the quantity of power attract comparison to eMMC. due to this, makers will decide if they need improved performance with identical power consumption of eMMC, or similar performance to eMMC with higher battery life. With UFS being far better in each attainable manner, this memory storage customary can most positively be the new shaping customary of future smartphones.

In terms of universe improvement, UFS-equipped devices ought to have visibly quicker boot times, app startups, and overall higher responsiveness.

Samsung isn’t the sole one trying to incorporate UFS memory in its future phones. Xiaomi, that is hot on Samsung’s heels, is rumoured to be doing identical with its approaching phones – which can positively build 2015 associate exciting year to look at.